Huizhou Tianyi rare material Co., Ltd

Product classification
  Sputtering Target
  Rare Earth Material
  Evaporation Material
  Chemical Reagent
  High Pure Metals
  Compounds
About TYR
Metal Sputtering Targets

Metal Sputtering Targets

Metal Sputtering Targets      Alloy Sputtering Target       Noble Metal and alloy Sputtering Targets

Oxide Sputtering Target        Nitride Sputtering Target         Sulfide Sputtering Target                                                                                                                                                                          

Carbide Sputtering Target     Boride Sputtering Target       Antimonide  Sputtering Target              

 Selenide Sputtering Target       Silicide Sputtering Target                                                                                                   

 Arsenie Sputtering Targets   Fluoride Sputtering Target        Telluride Sputtering Target   

 

 Material Name        Formula             Purity

Aluminum                   Al                   99.99%, 99.999%

Antimony                   Sb                 99.99%, 99.999%

Boron                        B                     99.9%

Bismuth                     Bi                 99.99%, 99.999%

Graphite                     C                   99.99%

Cobalt                       Co                  99.9%, 99.95%, 99.99%

Chromium                 Cr                 99.5%, 99.9%, 99.95%

Copper                      Cu                 99.99%, 99.999%

Cadmium                  Cd                 99.99%

Cerium                      Ce                  Ce/TREM>99.5%, 99.9%, TREM: 99%

Dysprosium               Dy                    Dy/TREM>99.5%, 99.9%, TREM: 99%

Europium                   Eu                 Eu/TREM>99.95, 99.99%, TREM: 99%

Erbium                       Er                 Er/TREM>99.9%,  TREM: 99%

Germanium                Ge                  99.999%, polycrystal or monocrystal

Gadolinium                   Gd                 Gd/TREM>99.9%, 99.99% TREM: 99%

Holmium                       Ho                 Ho/TREM>99.9%, 99.99% TREM: 99%

Hafnium                       Hf                 99.5%, 99.9%

Iron                           Fe                 99.9%, 99.99%

Iridium                       Ir                     99.95%

Indium                       In                 99.9%, 99.99%99.999%

Lanthanum                      La                    La/TREM>99.5%, 99.9%, TREM: 99%

Lutetium                    Lu                 Lu/TREM>99.99% TREM: 99%

Molybdenum                    Mo                 99.95%

Magnesium                     Mg                  99.95%

Manganese                     Mn                    99.9%

Nickel                       Ni                 99.9%, 99.98%, 99.995%, 99.999%

Niobium                       Nb                 99.95%

Neodymium                   Nd                 Nd/TREM>99.5%, 99.9%, TREM: 99%

Lead                           Pb                 99.99%

Praseodymium                   Pr                 Pr/TREM>99.5%, TREM: 99%

Rhenium                       Re                 99.95%, 99.99%

Samarium                   Sm                 Sm/TREM>99.9%, TREM: 99%

Silicon                       Si                 99.999%, 99.9999%,poly or mono crystal, doped or undoped 

Selenium                       Se                 99.99%, 99.999%

Scandium                       Sc                  Sc/TREM>99.9%, 99.99% TREM: 99%

Terbium                       Tb                 Tb/TREM>99.9%, 99.99% TREM: 99%

Tellurium                       Te                  99.99%99.999%

Tantalum                       Ta                  99.95%, 99.99%

Titanium                   Ti                    99.7%, 99.99%, 99.995%, 99.999%

Thulium                       Tm               Tm/TREM>99.9%, 99.99% TREM: 99%

Tin                          Sn                    99.99%, 99.999%

Tungsten                      W                     99.95%

Vanadium                     V                    99.9%

Ytterbium                     Yb                   Yb/TREM>99.9%, 99.99% TREM: 99%

Yttrium                       Y                    Y/TREM>99.9%, 99.99% TREM: 99%

Zirconium                     Zr                    99.2%, 99.5%, 99.9%

Zinc                          Zn                    99.995%

 

 

Shape: discs, plate, rod, tube, sheet, Delta, and per drawing

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Spec.: Diameter: 355.6mm (14") max. Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, if larger size than this, we can do it as tiles joint by 45 degree or 90 degree.

 

 

We have only listed the more popular material. Please feel free contact us with any special requirements at any times, we will try to get back for you ASAP.

 

Sputtering Process Applications : Magnetic Data StorageElectronics / SemiconductorDisplaysGlass

CoatingsPhotovoltaicsSolar ThermalWear Resistance

 

Sputtering process is used in a variety of applications such as flat panel displays, optical discs, automotive and architectural glass, web coating, hard coatings, optical communications, solar cells, semiconductors, magnetic data storage devices, electron microscopy, and decorative applications.

Sputtering process can be used for depositing thin films from a wide range of materials on to different substrates. Although process parameters make sputtering a complex process, they allow a greater degree of control over the film’s growth and structure.

 

How many kinds of sputtering method have ?

Sputtering Method: Magnetron sputtering, DC (direct current) sputtering, Radio Frequency (RF) sputteringPlasma sputtering, Reactive sputtering

Physics of sputteringElectronic sputtering, Potential sputtering, Etching and chemical sputtering

Radio frequency (RF) sputtering is a technique that is used to create thin films, such as those found in the computer and semiconductor industry

DC magnetron sputtering is one of several types of sputtering, which is a method of physical vapor deposition of thin films of one material onto another material

 

Magnetron sputtering is a type of physical vapor deposition, a process in which a target material is vaporized and deposited on a substrate to create a thin film

Plasma sputtering is a technique used to create thin films of various substances. During the plasma sputtering process, a target material, in the form of a gas, is released into a vacuum chamber and exposed to a high intensity magnetic field.

Reactive sputtering for compound thin films: The sputtering process is often used to deposit metal thin films.  To make sputtered metal thin films we just run the sputtering process in an inert gas (usually Argon).  To make a compound thin film (such as SiO2, AlN, TiC) by reactive sputtering we add the appropriate reactive gas to the sputtering process.

 

There are many different ways to deposit materials such as metals, ceramics, and plastics onto a surface (substrate) and to form a thin film. Among these is a process called “SPUTTERING” that has become one of the most common ways to fabricate thin films. Sputtering is a physical vapor deposition (PVD) process used for depositing materials onto a substrate, by ejecting atoms from such materials and condensing the ejected atoms onto a substrate in a high vacuum environment.

 

What is Sputtering Targets ?

A sputtering target is a material that is used to create thin films in a technique known as sputter deposition, thin film deposition. During this process the sputtering target material, which begins as a solid, is broken up by gaseous ions into tiny particles that form a spray and coat another material, which is known as the substrate. Sputter deposition is commonly involved in the creation of semiconductors and computer chips. In order to obtain the required characteristics in a sputter deposited thin film, the production process utilized to build the sputtering target can be of significant importance. Regardless of the fact that the target material has an element, mixture of elements, compound, or alloys are available that create hardened thin coatings for various tools. the process undertaken to create that defined material, which is ideal for sputtering thin films of uniform quality, is equally important as the deposition run parameters perfected by scientists and engineers dealing in thin film processes.

 

Depending on the nature of the thin film being created, sputtering targets can very greatly in size and shape. The smallest targets can be less than one inch (25.4mm) in diameter, while the largest rectangular targets reach well over 1500mm in length. Some sputtering equipment will require a larger sputtering target and in these cases, manufacturers will create segmented targets that are connected by special joints.

 

The designs of sputtering systems, the machines that conduct the thin film deposition process, have become much more varied and specific. Accordingly, target shape and structure has begun to widen in variety as well. The shape of a sputtering target is usually either rectangular or circular, but our TYR (allelem76@gmail.com) can create additional special shapes upon request. Certain sputtering systems require a rotating target to provide a more precise, even thin film. These targets are shaped like long cylinders, and offer additional benefits including faster deposition speeds, less heat damage, and increased surface area, which leads to greater overall utility.

 

Thin films that require pure metals for the target material will usually have more structural integrity if the target is as pure as possible, TYR (allelem76@gmail.com) can supply high pure metal targets purity as to 99.9999% for some material. The ions used to bombard the sputtering target are also important for producing a decent quality thin film. Generally, argon is the primary gas chosen to ionize and initiate the sputtering process, but for targets that have lighter or heavier molecules a different noble gas, such as neon for lighter molecules, or krypton for heavier molecules, is more effective. It is important for the atomic weight of the gas ions to be similar to that of the sputtering target molecules to optimize the transfer of energy and momentum, thereby optimizing the evenness of the thin film.

 

 

Sputtering        Thin Film Sputtering     Ceramic Coating  PVD Coating  Target            Ceramic Coating        Evaporation Coating  

Plasma Deposition  Plasma Machines        Vacuum Coating

 

 

Product classification

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