Huizhou Tianyi rare material Co., Ltd

Product classification
  Sputtering Target
  Rare Earth Material
  Evaporation Material
  Chemical Reagent
  High Pure Metals
  Compounds
About TYR
Oxide Sputtering Targets

Oxide Ceramic Sputtering Targets

 

Metal Sputtering Targets                  Alloy Sputtering Targets                 Noble Metal and alloy Sputtering Targets

Oxide Sputtering Targets                 Nitride Sputtering Targets              Sulfide Sputtering Targets

Carbide  Sputtering Targets            Boride Sputtering Targets               Antimonide  Sputtering Targets

Fluoride Sputtering Targets            Selenide Sputtering Targets             Silicide Sputtering Targets

Telluride Sputtering Targets            Arsenide Sputtering Targets

 

Targets Shape: discs, plate, rod, tube, sheet, Delta, and per drawing

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Targets Spec.: Diameter: 355.6mm (14") max. Single piece Size: Length: <254mm, Width: <127mm, Thickness: >1mm, if larger size than this, we can do it as tiles joint by 45 degree or 90 degree.

 

Our oxide ceramic targets product list as following:

 

Aluminum Oxide Al2O3 target                  Aluminum Zinc Oxide Al2O3-ZnO  Al-ZnO target

Antimony Oxide Sb2O3 target                   Antimony Tin Oxide Sb2O3-SnO  ATO target 

 

Chromium Oxide Cr2O3 target                Copper Oxide CuO, Cu2O target                                  

Cerium Oxide CeO2 Target                       Cobalt Oxide target  CoO, Co2O3, Co3O4 target

 

Dysprosium Oxide Dy2O3 target              Europium Oxide Eu2O3 target

Erbium Oxide Er2O3 target                     Germanium Oxide GeO2 target  

 

Gadolinium Oxide Gd2O3 target            Gallium Oxide Ga2O3 target

Hafnium Oxide HfO2 target                    Hafnium Yttrium Oxide HfO2-Y2O3 target

 

Holmium Oxide Ho2O3 target                Iron Oxide Fe2O3, Fe3O4 target

Indium Oxide In2O3 target                    Indium Zinc Oxide, In2O3-ZnO target

 

Indium Zinc Gallium Oxide In2O3-ZnO-Ga2O3, IZGO target         

Indium Gallium Oxide In2O3-Ga2O3, IGO target 

 

Indium Tin Oxide In2O3-SnO2, ITO target        Lanthanum Oxide La2O3 target

Lutetium Oxide Lu2O3 target                             Magnesium Oxide MgO target

 

Molybdenum Oxide MoO3 target                       Manganese Oxide MnO2,MnO target           

Nickel Oxide NiO target                                      Niobium Oxide Nb2O5, Nb2Ox target

 

Neodymium Oxide Nd2O3 target                      Praseodymium Oxide Pr6O11 target

Samarium Oxide Sm2O3 target                        Scandium Oxide Sc2O3 target

 

Silicon Dioxide SiO2 target                                Silicon Monoxide SiO target                    

Strontium Titanate SrTiO3 target                    Strontium Barium Titanate SrBaTiO3 target

 

Strontium Ruthenate SrRuO3 target               Barium Titanate BaTiO3 target

Terbium Oxide Tb4O7 Target                          Tantalum Oxide Ta2O5, Ta2Ox target

 

Titanium Oxide TiO, TiO2, Ti2O3, Ti3O5 target                                                                   

Thulium Oxide Tm2O3 target                          Tin Oxide SnO, SnO2 target

 

Tungsten Oxide WO3, WO2.9 target              Tungsten Lithium Oxide WO3-Li2O target   

Ytterbium Oxide Yb2O3 target                       Yttrium Oxide Y2O3 target    

 

Zircon Oxide ZrO2 target                                Zinc Oxide ZnO target

Zirconium Oxide Yttria Stabilized ZrO2-Y2O3, YSZ target

 

Calcium Oxide CaO target                             Cadmium Oxide CdO target 

Doped Boron Oxide taret  ZnO-B2O3, ZrO2-B2O3 target

 

Bismuth Oxide Bi2O3 target                          Bismuth Ferrite BiFeO3 target

Vanadium Oxide V2O5, VO2 target             Ruthenium Oxide RuO2 target

 

Lead Oxide PbO target                                   LaTiO3, SrTiO3-La, EuTiO3 target 

Yttrium Barium Copper Oxide YBCO taret      Gadolinium Barium Copper Oxide, GdBaCuOx target

 

LaMnO3 target, LaSrMnOx target                 Barium Oxide BaO target

Lead zirconate titanate PbZrTiO3, PZT target    Y3Fe5O12, YIG target

 

 

We have only listed the more popular material. Please feel free contact us with any special requirements at any times, we will try to get back for you ASAP.

 

Sputtering Process Applications : Magnetic Data StorageElectronics / SemiconductorDisplaysGlass

CoatingsPhotovoltaicsSolar ThermalWear Resistance

 

Sputtering process is used in a variety of applications such as flat panel displays, optical discs, automotive and architectural glass, web coating, hard coatings, optical communications, solar cells, semiconductors, magnetic data storage devices, electron microscopy, and decorative applications.

Sputtering process can be used for depositing thin films from a wide range of materials on to different substrates. Although process parameters make sputtering a complex process, they allow a greater degree of control over the film’s growth and structure.

 

How many kinds of sputtering method have ?

Sputtering Method: Magnetron sputtering, DC (direct current) sputtering, Radio Frequency (RF) sputteringPlasma sputtering, Reactive sputtering

Physics of sputteringElectronic sputtering, Potential sputtering, Etching and chemical sputtering

Radio frequency (RF) sputtering is a technique that is used to create thin films, such as those found in the computer and semiconductor industry

DC magnetron sputtering is one of several types of sputtering, which is a method of physical vapor deposition of thin films of one material onto another material

 

Magnetron sputtering is a type of physical vapor deposition, a process in which a target material is vaporized and deposited on a substrate to create a thin film

Plasma sputtering is a technique used to create thin films of various substances. During the plasma sputtering process, a target material, in the form of a gas, is released into a vacuum chamber and exposed to a high intensity magnetic field.

Reactive sputtering for compound thin films: The sputtering process is often used to deposit metal thin films.  To make sputtered metal thin films we just run the sputtering process in an inert gas (usually Argon).  To make a compound thin film (such as SiO2, AlN, TiC) by reactive sputtering we add the appropriate reactive gas to the sputtering process.

 

There are many different ways to deposit materials such as metals, ceramics, and plastics onto a surface (substrate) and to form a thin film. Among these is a process called “SPUTTERING” that has become one of the most common ways to fabricate thin films. Sputtering is a physical vapor deposition (PVD) process used for depositing materials onto a substrate, by ejecting atoms from such materials and condensing the ejected atoms onto a substrate in a high vacuum environment.

 

What is Sputtering Targets ?

A sputtering target is a material that is used to create thin films in a technique known as sputter deposition, thin film deposition. During this process the sputtering target material, which begins as a solid, is broken up by gaseous ions into tiny particles that form a spray and coat another material, which is known as the substrate. Sputter deposition is commonly involved in the creation of semiconductors and computer chips. In order to obtain the required characteristics in a sputter deposited thin film, the production process utilized to build the sputtering target can be of significant importance. Regardless of the fact that the target material has an element, mixture of elements, compound, or alloys are available that create hardened thin coatings for various tools. the process undertaken to create that defined material, which is ideal for sputtering thin films of uniform quality, is equally important as the deposition run parameters perfected by scientists and engineers dealing in thin film processes.

 

Depending on the nature of the thin film being created, sputtering targets can very greatly in size and shape. The smallest targets can be less than one inch (25.4mm) in diameter, while the largest rectangular targets reach well over 1500mm in length. Some sputtering equipment will require a larger sputtering target and in these cases, manufacturers will create segmented targets that are connected by special joints.

 

The designs of sputtering systems, the machines that conduct the thin film deposition process, have become much more varied and specific. Accordingly, target shape and structure has begun to widen in variety as well. The shape of a sputtering target is usually either rectangular or circular, but our TYR ([email protected]) can create additional special shapes upon request. Certain sputtering systems require a rotating target to provide a more precise, even thin film. These targets are shaped like long cylinders, and offer additional benefits including faster deposition speeds, less heat damage, and increased surface area, which leads to greater overall utility.

 

Thin films that require pure metals for the target material will usually have more structural integrity if the target is as pure as possible, TYR ([email protected]) can supply high pure metal targets purity as to 99.9999% for some material. The ions used to bombard the sputtering target are also important for producing a decent quality thin film. Generally, argon is the primary gas chosen to ionize and initiate the sputtering process, but for targets that have lighter or heavier molecules a different noble gas, such as neon for lighter molecules, or krypton for heavier molecules, is more effective. It is important for the atomic weight of the gas ions to be similar to that of the sputtering target molecules to optimize the transfer of energy and momentum, thereby optimizing the evenness of the thin film.

 

 

Sputtering        Thin Film Sputtering     Ceramic Coating  PVD Coating  Target            Ceramic Coating        Evaporation Coating  

Plasma Deposition  Plasma Machines        Vacuum Coating

 

 

 

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