Huizhou Tianyi rare material Co., Ltd

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  Sputtering Target
  Rare Earth Material
  Evaporation Material
  Chemical Reagent
  High Pure Metals
  Compounds
About TYR
Silicides

Silicides compound material

 

Silicides Powder          Silicides Pieces, granules       Silicides Sputtering Targets

 

Specifications for Inorganic Silicide compound material

Powders: -100 mesh, -160 mesh, -200 mesh, -325mesh e.t.c

Piece, granules: 3-6mm,  1-6mm, 3-12mm e.t.c

Sputtering Targets: Discs of max. Diameter 14 diameter, 355.6mm max. L x 200mm W.

 

TYR supplying Inorganic silicides are available in a variety of forms, quantity, shapes to precisely fit your needs

 

 

Material Name

Formula

Purity

 Available Shape

Zirconium Silicide

ZrSi2

99%

Powder, Pieces, Granules, Sputtering Targets

Molybdenum Silicide

MoSi2

99.9%

Powder, Pieces, Granules, Sputtering Targets

Tungsten Silicide

WSi2

99.9%

Powder, Pieces, Granules, Sputtering Targets

Chromium Silicide

CrSi2

99.5%

Powder, Pieces, Granules, Sputtering Targets

Cobalt Silicide

CoSi2

99.5%

Powder, Pieces, Granules, Sputtering Targets

Tantalum Silicide

TaSi2

99.9%

Powder, Pieces, Granules, Sputtering Targets

 

 

About Inorganic Silicides compound material basic knowledge:

 

A silicide is a compound that has silicon with (usually) more electropositive elements, Silicon is more electropositive than carbon. Silicides are structurally closer to borides than to carbides.

Similar to borides and carbides, the composition of silicides cannot be easily specified as covalent molecules. The chemical bonds in silicides range from conductive metal-like structures to covalent or ionic. Silicides of all non-transition metals, with exception of beryllium, have been described.

A silicide prepared by a self-aligned process is called a salicide. This is a process in which silicide contacts are formed only in those areas in which deposited metal (which after annealing becomes a metal component of the silicide) is in direct contact with silicon, hence, the process is self-aligned. It is commonly implemented in MOS/CMOS processes for ohmic contacts of the source, drain, and poly-Si gate.The transition metal silicides are, in contrast, usually inert to aqueous solutions of everything with exception of hydrofluoric acid; however, they react with more aggressive agents, e.g. melted potassium hydroxide, or fluorine and chlorine when red-hot.

 

Silicide Formation are from four kinds of technique method:  Deposition, Co-evaporation, sputter deposition and Chemical vapor deposition

 Interconnection paths that possess low resistivities and the ability to withstand subsequent high temperature processes are critical to VLSI manufacturing. The resistivity of Al is low enough for VLSI interconnection purposes, but its low melting and eutectic temperatures restrict subsequent processes to operating temperatures of less than 500 deg C. Thus, instead of using Al, such low-resistivity interconnections are usually fabricated using materials known as refractory metal silicides (MSix), which can handle much higher processing temperatures than Al.

The formation of refractory metal silicides (such as WSi2, TiSi2, MoSi2, and TaSi2)  in VLSI circuits can generally be accomplished in four ways:  1) by deposition of the pure metal onto an Si layer (which can be the single-crystal substrate or poly-crystalline Si); 2) simultaneous evaporation of the silicon and the refractory metal from two sources (or 'co-evaporation'); 3) sputter-deposition of the silicide, either from a composite target or by co-sputtering; and 4) chemical vapor deposition (CVD).

 

 

Applications for each Inorganic Silicides:

Tungsten Silicide, WSi2 is used in microelectronics as a contact material, with resistivity 60–80 μΩcm; it forms at 1000 °C, Density 9.3 g/cm3, Melting point 2160°C . It is often used as a shunt over polysilicon lines to increase their conductivity and increase signal speed. Tungsten silicide layers can be prepared by chemical vapor deposition, e.g. using monosilane or dichlorosilane with tungsten hexafluoride as source gases. The deposited film is non-stoichiometric, and requires annealing to convert to more conductive stoichiometric form. Tungsten silicide is a replacement for earlier tungsten films.[2] Tungsten silicide is also used as a barrier layer between silicon and other metals, e.g. tungsten.

 

Tungsten silicide also finds use in microelectromechanical systems and for oxidation-resistant coatings.

Films of tungsten silicide can be plasma-etched using e.g. nitrogen trifluoride gas.

 

Chromium silicide, CrSi2, Density 4.39g/cm3, Melting point 1470°C

 

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