Aluminum Nitrite (AlN) sputtering target use in thin film coating CAS 24304-00-5

Aluminum Nitride (AlN) ceramic sputtering target use in evaporation or thin film coating material

Purity: 99.5%

Size:

Diameter: 355.6mm (14") max.

Single piece Size: Length: <350mm, Width: <250mm, Thickness: >1mm,

if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing

Molar mass: 40.9882 g/mol
Appearance: white to pale-yellow solid
Density: 3.260 g/cm3
Melting point: 2,200 °C (3,990 °F; 2,470 K)
Boiling point: 2,517 °C (4,563 °F; 2,790 K) 

Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics. Aluminium nitride is stable at high temperatures in inert atmospheres and melts at 2800 °C. In a vacuum, AlN decomposes at ~1800 °C. In the air, surface oxidation occurs above 700 °C, and even at room temperature, surface oxide layers of 5-10 nm have been detected. This oxide layer protects the material up to 1370 °C. Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon dioxide atmospheres up to 980 °C.

Applications:

Epitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN's piezoelectric properties. One application is an RF filter which is widely used in mobile phones, which is called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.

Aluminium nitride is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.

Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.

Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have been achieved. In May 2006, an inefficient AlN LED emission at 210 nm was reported.

There are also multiple research efforts in industry and academia to use aluminum nitride in piezoelectric MEMS applications. These include resonators, gyroscopes and microphones.

Among the applications of AlN are

• opto-electronics,
• dielectric layers in optical storage media,
• electronic substrates, chip carriers where high thermal conductivity is essential,
• military applications,
• as a crucible to grow crystals of gallium arsenide,
• steel and semiconductor manufacturing.

​We also supplying other nitride targets material as following:

Nitride Ceramic sputtering target

Aluminum Nitride , AlN target

Boron Nitride, BN target

Hafnium Nitride, HfN target

Niobium Niride , NbN target

Silicom Nitride , Si3N4 target

Tantalum Nitride , TaN target

Titanium Carbon nitride , TiCN target

Titanium Nitride, TiN target

​Tungsten Nitride, WN targets

Vanadium Nitride , VN target

Zirconium Nitride , ZrN target